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Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)
Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings

PDF] Different Isolation Processes for Free-Standing GaN p-n Power Diode With Ultra-High Current Injection | Semantic Scholar
PDF] Different Isolation Processes for Free-Standing GaN p-n Power Diode With Ultra-High Current Injection | Semantic Scholar

A Seriously High-Power Gallium Nitride Diode | Engineering.com
A Seriously High-Power Gallium Nitride Diode | Engineering.com

Figure 34. I-V characteristics of the Pt/GaOx/GaN-based Schottky diode sensor device under different concentrations of H2 gas at (a) 300 (b) 373 and (c) 523 K (d) Schematic energy band diagrams of
Figure 34. I-V characteristics of the Pt/GaOx/GaN-based Schottky diode sensor device under different concentrations of H2 gas at (a) 300 (b) 373 and (c) 523 K (d) Schematic energy band diagrams of

Typical current-voltage characteristics of the Au/n-GaN diode at room... | Download Scientific Diagram
Typical current-voltage characteristics of the Au/n-GaN diode at room... | Download Scientific Diagram

Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... | Download Scientific Diagram
Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... | Download Scientific Diagram

Graphene-GaN Schottky diodes | SpringerLink
Graphene-GaN Schottky diodes | SpringerLink

a), (b) Two vertical structures of Schottky diode fabricated on GaN... | Download Scientific Diagram
a), (b) Two vertical structures of Schottky diode fabricated on GaN... | Download Scientific Diagram

Panasonic claims 7.6kA/cm² for a GaN diode
Panasonic claims 7.6kA/cm² for a GaN diode

Embedding diodes in normally-off GaN transistors
Embedding diodes in normally-off GaN transistors

Improving the Current‐Spreading Effect for GaN‐Based Quasi‐Vertical PIN Diode by Using an Embedded PN Junction - Liu - 2020 - physica status solidi (a) - Wiley Online Library
Improving the Current‐Spreading Effect for GaN‐Based Quasi‐Vertical PIN Diode by Using an Embedded PN Junction - Liu - 2020 - physica status solidi (a) - Wiley Online Library

Structure of the Al0.27Ga0.73N/GaN diode under study. | Download Scientific Diagram
Structure of the Al0.27Ga0.73N/GaN diode under study. | Download Scientific Diagram

Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier: Applied Physics Letters: Vol 108, No 11
Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier: Applied Physics Letters: Vol 108, No 11

Gallium nitride vertical junction barrier Schottky diodes
Gallium nitride vertical junction barrier Schottky diodes

High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide–Vertical ZnO Nanorods on an AlGaN/GaN Layer | ACS Applied Materials & Interfaces
High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide–Vertical ZnO Nanorods on an AlGaN/GaN Layer | ACS Applied Materials & Interfaces

High Breakdown Voltage with Low On-state Resistance of InGaN/GaN Vertical Conducting Diodes
High Breakdown Voltage with Low On-state Resistance of InGaN/GaN Vertical Conducting Diodes

PTC Website
PTC Website

Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes

Switching performance of quasi‐vertical GaN‐based p‐i‐n diodes on Si - Zhang - 2017 - physica status solidi (a) - Wiley Online Library
Switching performance of quasi‐vertical GaN‐based p‐i‐n diodes on Si - Zhang - 2017 - physica status solidi (a) - Wiley Online Library

Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range - ScienceDirect
Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range - ScienceDirect

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown: Applied Physics Letters: Vol 107, No 24
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown: Applied Physics Letters: Vol 107, No 24

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors | Scientific Reports
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors | Scientific Reports