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Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy
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A Comparative Investigation of SiGe Junctionless Triple Gate (JLTG) and Junctionless Gate-All-Around (JL-GAA) MOSFET | SpringerLink
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n-channel MOSFET with SiGe STS and Si:C S/D. Lattice interaction in the... | Download Scientific Diagram
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